We have grown homogeneous alloys of Sn1−xGex with 0.01<x<0.1 by molecular beam epitaxy on 〈100〉 InSb substrates. The Sn‐Ge system is immiscible due to differing equilibrium crystal structures at the growth temperature. By stabilizing the diamond cubic α‐Sn with the InSb template, we have created a metastable miscibility region for alloying Sn and Ge. Pure α‐Sn grown on 〈100〉 InSb shows a tetragonal expansion perpendicular to the substrate because of the slightly larger lattice parameter of α‐Sn. As the smaller Ge atom is added, the strain converts from compressive to tension resulting in an effective 1.66% tetragonal contraction in the growth direction for Sn0.92Ge0.08.
REFERENCES
1.
2.
C. H. L.
Goodman
, IEE Proc.
129
, 189
(1982
).3.
4.
G. L.
Harris
, K. H.
Jackson
, G. J.
Felton
, K. R.
Osborne
, K.
Fekade
, and G.
Spencer
, Mater. Lett.
4
, 77
(1986
).5.
J. C. Bean, in Proceedings of 1st. International Symposium on Si MBE, edited by J. C. Bean (Electrochemical Society, Pennington, NJ, 1985), Vol. S5‐7, p. 337.
6.
S. Luryi (private communication).
7.
S.
Oguz
, William
Paul
, T. F.
Deutch
, B.‐Y.
Tsaur
, and D. V.
Murphy
, Appl. Phys. Lett.
43
, 50
(1983
).8.
R. F. C.
Farrow
, D. S.
Robertson
, G. M.
Williams
, A. G.
Cullis
, G. R.
Jones
, I. M.
Young
, and P. N. J.
Dennis
, J. Cryst. Growth
48
, 201
(1984
).9.
M. T. Asom, R. A. Kortan, and L. C. Kimerling (unpublished).
10.
11.
12.
13.
14.
M. T. Asom and R. People (unpublished).
This content is only available via PDF.
© 1989 American Institute of Physics.
1989
American Institute of Physics
You do not currently have access to this content.