Highly nondegenerate four‐wave mixing (δω>100 GHz) has been observed in GaAlAs semiconductor lasers in the case where each of the pump, probe, and conjugate frequencies is close to that of a cavity mode. The high measured reflectivities (∼1000) have been demonstrated to depend on the relative position of the pump and probe cavity resonances. When the probe frequency was tuned, probe and conjugate spectra exhibited resonances on the cavity modes lying near the probe and conjugate frequencies. Such experiments may greatly help both in the modeling of laser action and in the measurement of laser parameters.

Topics
Cavity resonance, Four wave mixing, Semiconductor lasers
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1989
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