Sequential surface reactions of trimethylaluminum and water vapor have been used to deposit Al2O3 on Si(100) surfaces. The self‐limiting nature of the surface reactions allows precise control of the thickness of the deposited layers and gives rise to films with highly conformal step coverage. High quality dielectrics have been deposited at temperatures as low as 100 °C. Resistivities of 1017 Ω cm, breakdown strengths of 8×106 V/cm, and interface‐state densities of 1011 states/eV cm2 have already been achieved and they suggest possible applications as a gate insulator or a dielectric passivation layer.
REFERENCES
1.
T. Suntola and M. J. Antson, U.S. Patent No. 4 058 430 (1977);
M.
Pessa
, H.
Mäkelö
, and T.
Suntola
, Appl. Phys. Lett.
38
, 131
(1981
).2.
J.
Nishizawa
, H.
Abe
, and T.
Kurabayashi
, J. Electrochem. Soc.
132
, 1197
(1985
).3.
S. M.
Bedair
, M. A.
Tischler
, T.
Katsuyama
, and N. A.
El‐Masry
, Appl. Phys. Lett.
47
, 51
(1985
).4.
5.
K.
Mori
, M.
Yoshida
, A.
Usui
, and H.
Terao
, Appl. Phys. Lett.
52
, 27
(1988
).6.
Atomic layer epitaxy is somewhat of a misnomer for this technique as it is difficult to imagine layer‐by‐layer growth of an amorphous material.
7.
K.
Yablonovitch
, D. L.
Allara
, C. C.
Chang
, T.
Gmitter
, and T. B.
Bright
, Phys. Rev. Lett.
57
, 249
(1986
).8.
V. A.
Burrows
, Y. J.
Chabal
, G. S.
Higashi
, K.
Raghavachari
, and S. B.
Christman
, Appl. Phys. Lett.
53
, 998
(1988
).9.
D. J. C.
Yates
, G. W.
Dembinski
, W. R.
Kroll
, and J. J.
Elliott
, J. Phys. Chem.
73
, 911
(1969
).10.
G. S.
Higashi
and L. J.
Rothberg
, J. Vac. Sci. Technol. B
3
, 1460
(1985
).
This content is only available via PDF.
© 1989 American Institute of Physics.
1989
American Institute of Physics
You do not currently have access to this content.
