Photoluminescence of GaAs grown dilutely doped with Si by molecular beam epitaxy with modulated source supplies

GaAs layers grown dilutely doped with Si by molecular beam epitaxy (MBE) with modulated‐source supplies have been characterized using low‐temperature photoluminescence. Free‐ and bound‐exciton emissions were observed in the near‐band‐edge region of photoluminescence spectra. A change in the spectral features of impurity‐related emissions was induced by varying the modulation of the Si molecular beam in the MBE growth. It is found that the Si atoms are incorporated as either donors or acceptors, according to the timing of the Si supply during the As‐source supply in MBE growth. We achieved Si doping on addressed sites by varying the timing of the Si supply.