We demonstrate for the first time that ion implantation and implant activation annealing, combined with a heavily doped InGaAs surface layer, can be used to make nonalloying shallow ohmic contact to an n‐type InGaAs (or GaAs) quantum well. Quantum Hall effect and Shubnikov–de Haas oscillations are clearly observed, which indicates that electrons in the quantum well remain two dimensional despite the post‐implantation high‐temperature annealing. This technique can be applied to devices that would need to make shallow ohmic contact to a thin (∼100 Å or less) quantum well, where existing selective etching approaches fail to work.
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