We consider a sharply defined doping layer near the interface of a heterostructure on the narrow‐gap side. It is shown that an interface‐induced dipole moment results, whose magnitude depends on the quantum spread of the electronic charge. The result of thermionic emission measurement of the barrier height is compared with a self‐consistent, nonparabolic subband calculation.
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© 1989 American Institute of Physics.
1989
American Institute of Physics
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