Arsenic‐doped CdTe epilayers grown by photoassisted molecular beam epitaxy Available to Purchase

We report the successful p‐type doping of CdTe films with arsenic using the photoassisted molecular beam epitaxy growth technique. These doped epilayers were grown at substrate temperatures as low as 180 °C. The room‐temperature hole concentrations in the CdTe:As layers ranged from 7×10¹⁵ to 6.2×10¹⁸ cm⁻³ as determined by van der Pauw–Hall effect measurements. We propose a doping mechanism responsible for the high p‐type doping levels observed in the films. The arsenic acceptor ionization energy was found to ∼58–60 meV using low‐temperature photoluminescence measurements.