At North Carolina State University, we have recently employed photoassisted molecular beam epitaxy to successfully prepare p‐type modulation‐doped HgCdTe. The modulation‐doped HgCdTe samples were grown on lattice‐matched (100) CdZnTe substrates cut from boules grown at Santa Barbara Research Center. In this letter, we report details of the growth experiments and describe the structural, optical, and electrical properties that this new infrared quantum alloy of HgCdTe possesses.
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© 1989 American Institute of Physics.
1989
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