Amorphous chalcogenide thin‐film p‐n junctions have been formed between p‐type As2Se3 or Ge20Se80 and n‐type Ge20Bi15Se65. The rectifying behavior was observed only for the junctions which were formed by depositing the p‐type films on the annealed n‐type films. The forward currents in these junctions were found to be space‐charge‐limited, as in the previously formed p‐type film/n‐type bulk glass junctions. The photovoltaic properties of the thin‐film p‐n junctions have been improved, compared with the film/bulk glass junctions, due to the decrease in series resistance of the cells.
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© 1988 American Institute of Physics.
1988
American Institute of Physics
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