We describe modulated optical reflectance experiments with polycrystalline silicon layers treated by rapid optical annealing. The layers were deposited on SiO2 or on crystalline Si. It turns out that the modulated optical reflectance signals are very sensitive to small variations of the grain size in the first case and to epitaxial realignment in the second one.
REFERENCES
1.
2.
G. L.
Patton
, J. C.
Bravman
, and J. D.
Plummer
, IEEE Trans. Electron Devices
ED‐33
, 1754
(1986
).3.
4.
H.
Oppolzer
, R.
Falckenberg
, and E.
Doering
, J. Microsc.
118
, 97
(1980
).5.
6.
T. C.
Chou
, C. Y.
Wong
, and K. N.
Tu
, J. Appl. Phys.
62
, 2722
(1987
) and references therein.7.
8.
H. J.
Böhm
, H.
Wendt
, and H.
Oppolzer
, J. Appl. Phys.
62
, 2784
(1987
) and references therein.9.
10.
J.
Opsai
, M. W.
Taylor
, W. L.
Smith
, and A.
Rosencwaig
, J. Appl. Phys.
61
, 240
(1986
) and references therein.11.
W. L.
Smith
, A.
Rosencwaig
, and D. L.
Willenborg
, Appl. Phys. Lett.
47
, 584
(1985
).12.
P.
Geraghty
and W. L.
Smith
, Mater. Res. Soc. Symp. Proc.
68
, 387
(1986
).13.
P. Alpern, W. Berghoiz, and R. Kakoschke, J. Electrochem. Soc. (to be published).
14.
F. J. Stützler, Ph.D. thesis and references therein, University of Stuttgart 1986.
15.
That is the integral of the RBS counts versus channel curve over the poly‐Si peak divided by the signal from the as‐deposited sample. Measurements by P. Eichinger/Gemetec GmbH, Paul‐Gerhardt‐Alle 50, 8 München 60, FRG.
This content is only available via PDF.
© 1988 American Institute of Physics.
1988
American Institute of Physics
You do not currently have access to this content.
