Successful growth of (100)ErAs single‐crystal films on (100)GaAs has been demonstrated. Reflection high‐energy electron diffraction, low‐energy electron diffraction (LEED), and Rutherford backscattering with channeling indicate single‐crystal growth. LEED from the ErAs shows a (1×1) structure. Overgrowth of GaAs on ErAs is found to be difficult due to the GaAs not wetting the ErAs surface and hence resulting in island growth. For a 150‐Å‐thick film metallic behavior is observed with resistivities 17 and 70 μΩ cm at 1.5 K and room temperature, respectively. Low‐temperature Hall measurements show the conduction to be dominated by electrons with an effective n‐type mobility in the range 360 cm2/V s at 1.35 K.
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Research Article| December 26 1988
Epitaxial growth of ErAs on (100)GaAs
C. J. Palmstro/m;
C. J. Palmstro/m, N. Tabatabaie, S. J. Allen; Epitaxial growth of ErAs on (100)GaAs. Appl. Phys. Lett. 26 December 1988; 53 (26): 2608–2610. https://doi.org/10.1063/1.100173
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