The effects of substrate misorientation on the interface quality of Ga0.47In0.53As/Al0.48In0.52As quantum well structures grown by molecular beam epitaxy lattice matched on InP substrates have been investigated. Transmission electron microscopy and low‐temperature (15 K) cathodoluminescence spectra have been used to characterize the GaInAs/AlInAs layers and analyze the effects of nucleation and growth kinetics on the heterojunction interface quality. The quantum well luminescence line shape correlates with the presence of compositional fluctuations in the AlInAs layers and thickness variations of the quantum wells for structures deposited on misoriented substrates. Rapid thermal annealing of these samples improves the quantum well luminescence characteristics.
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28 November 1988
Research Article|
November 28 1988
Substrate misorientation effects on the structure and electronic properties of GaInAs‐AlInAs interfaces
Yu‐Peng Hu;
Yu‐Peng Hu
Materials Department and Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, California 93106
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P. M. Petroff;
P. M. Petroff
Materials Department and Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, California 93106
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Xueyu Qian;
Xueyu Qian
Materials Department and Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, California 93106
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A. S. Brown
A. S. Brown
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, California 90265
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Appl. Phys. Lett. 53, 2194–2196 (1988)
Article history
Received:
July 18 1988
Accepted:
September 19 1988
Citation
Yu‐Peng Hu, P. M. Petroff, Xueyu Qian, A. S. Brown; Substrate misorientation effects on the structure and electronic properties of GaInAs‐AlInAs interfaces. Appl. Phys. Lett. 28 November 1988; 53 (22): 2194–2196. https://doi.org/10.1063/1.100280
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