Hydrogen in low‐pressure chemical vapor deposited oxynitride films was measured using elastic recoil detection with 2 MeV He ions. A distinction between N‐ and Si‐bonded hydrogen could be made for films deposited from ND3 instead of NH3. The analyses reveal that on an average three times as much hydrogen is incorporated as NH relative to SiH, and that a maximum in this ratio is present in oxynitride with a composition around O/N=0.3. This optimum coincides with a maximum in total hydrogen content in the film of 3.2 at. %. Hydrogen desorption occurs in a narrow temperature interval around 950 °C and proceeds virtually in an identical way for both binding types.
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© 1988 American Institute of Physics.
1988
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