We report the first successful incorporation of a pseudomorphic InGaAs base in a ballistic hot‐electron device. The device, with a 28‐nm‐thick In0.15Ga0.85As base, had a collector‐base breakdown voltage of 0.55 V and a maximum current transfer ratio of 0.89 at 4.2 K, considerably higher than the 0.75 in a comparable GaAs‐base device. Electron energy spectroscopy measurements revealed that at least 30% of the injected electrons traversed the InGaAs base ballistically, causing a strong modulation in the injected currents into the quantized base. The Γ‐L valley separation in the strained In0.15Ga0.85As was estimated to be about 410 meV.
REFERENCES
1.
M.
Hciblum
, I. M.
Anderson
, and C. M.
Knocdler
, Appl. Phys. Lett.
49
, 207
(1986
).2.
M.
Heiblum
, M. I.
Nathan
, D. C.
Thomas
, and C. M.
Knoedler
, Phys. Rev. Lett.
55
, 2200
(1985
).3.
M.
Heiblum
, E.
Calleja
, I. M.
Anderson
, W. P.
Dumke
, C. M.
Knocdler
, and L.
Osterling
, Phys. Rev. Lett.
56
, 2854
(1986
).4.
T. W.
Hickmott
, P. M.
Solomon
, R.
Fisher
, and K.
Morkoç
, J. Appl. Phys.
57
, 2844
(1985
).5.
K.
Inoue
, H.
Sakaki
, J.
Yoshino
, and Y.
Yoshioka
, Appl. Phys. Lett.
46
, 973
(1985
).6.
M. Heiblum and M. V. Fischetti, “Ballistic Electron Transport in Hot Electron Transistors,” to appear in Physics of Quantum Electron Devices, edited by F. Capasso, in Topics in Current Physics (Springer, Berlin, 1988).
7.
The conduction‐band nonparabolicity is accounted for via where is the kinetic energy in the Γ Band and α is the nonparabolicity parameter. The value for α in was approximated from a linear interpolation between in GaAs and in
8.
M.
Heiblum
, M. V.
Fischetti
, W. P.
Dumke
, D. J.
Frank
, I. M.
Anderson
, C. M.
Knoedler
, and L.
Osterling
, Phys. Rev. Lett.
58
, 816
(1987
).
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© 1988 American Institute of Physics.
1988
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