Fully relaxed buffer layers are of considerable importance for growth of high quality crystals on substrates having different lattice parameters. Recent experiments by Biefeld et al. [R. M. Biefeld, C. R. Hills, and S. R. Lee, J. Cryst. Growth (in press)] in the InAsSb system show that the degree of relaxation is considerably less than expected using conventional equilibrium models, but is more complete in continuously graded than in step‐graded buffer layers. In the present letter, this observation is explained in terms of Taylor‐type (dislocation interaction) work hardening.

Topics
Crystal lattices, Mechanical stress, Metallurgy
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© 1988 American Institute of Physics.
1988
American Institute of Physics
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