A theoretical comparison of In0.53Ga0.47As/InP and Al0.3Ga0.7As/GaAs heterojunction bipolar transistors has been undertaken in an effort to determine the relative merits of these material systems. The analysis uses a compact transistor model and considers devices with self‐aligned geometries including both extrinsic and intrinsic parameters. The high electron mobility in the In0.53Ga0.47As base layer and high peak velocity of electrons in the collector depletion layer result in a current gain cutoff frequency in excess of 150 GHz for an InP/In0.53Ga0.47As transistor with base thickness of 0.1 μm. Calculations revealed, however, that maximum oscillation frequency is strongly dependent on the contact resistance of the p‐type base layer, even for a self‐aligned base transistor. A maximum oscillation frequency of 138 GHz is theoretically predicted for an InP/In0.53Ga0.47As transistor with base thickness of 0.06 μm, base doping of 1×1020 cm−3, a p‐type contact resistance of 1.0×10−7 Ω cm2, a current density of 5×104 A/cm2, and a VCB of 5 V.

Topics
Electronic transport, Contact impedance, Electrical properties and parameters, Transistors
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© 1988 American Institute of Physics.
1988
American Institute of Physics
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