An atomistic growth model is used to explain sidewall facet and defect formation during selective epitaxial growth of (001) silicon. Films grown through oxide windows with {110} sidewall orientations exhibit facets (typically {311} planes) adjacent to the sidewall. This region also has a high density of twins. Films grown in windows oriented to have {100} sidewalls have no sidewall facets and a very low defect density. The facet morphology and twin formation at {110} sidewalls are both explained by the influence of the oxide on nucleation of {111} planes. Similar considerations indicate that films grown along {100} sidewalls are less susceptible to facet and defect formation, as observed. Experimental data on film morphology and defect structure are used to support the model.
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15 February 1988
Research Article|
February 15 1988
Model for facet and sidewall defect formation during selective epitaxial growth of (001) silicon
Appl. Phys. Lett. 52, 546–548 (1988)
Article history
Received:
October 19 1987
Accepted:
December 07 1987
Citation
C. I. DrowleyG. A. ReidR. Hull; Model for facet and sidewall defect formation during selective epitaxial growth of (001) silicon. Appl. Phys. Lett. 15 February 1988; 52 (7): 546–548. https://doi.org/10.1063/1.99412
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