An atomistic growth model is used to explain sidewall facet and defect formation during selective epitaxial growth of (001) silicon. Films grown through oxide windows with {110} sidewall orientations exhibit facets (typically {311} planes) adjacent to the sidewall. This region also has a high density of twins. Films grown in windows oriented to have {100} sidewalls have no sidewall facets and a very low defect density. The facet morphology and twin formation at {110} sidewalls are both explained by the influence of the oxide on nucleation of {111} planes. Similar considerations indicate that films grown along {100} sidewalls are less susceptible to facet and defect formation, as observed. Experimental data on film morphology and defect structure are used to support the model.
Skip Nav Destination
Article navigation
15 February 1988
Research Article|
February 15 1988
Model for facet and sidewall defect formation during selective epitaxial growth of (001) silicon Available to Purchase
C. I. Drowley;
C. I. Drowley
Hewlett–Packard Company, 3500 Deer Creek Road, Palo Alto, California 94304
Search for other works by this author on:
G. A. Reid;
G. A. Reid
Hewlett–Packard Company, 3500 Deer Creek Road, Palo Alto, California 94304
Search for other works by this author on:
R. Hull
R. Hull
Hewlett–Packard Company, 3500 Deer Creek Road, Palo Alto, California 94304
Search for other works by this author on:
C. I. Drowley
Hewlett–Packard Company, 3500 Deer Creek Road, Palo Alto, California 94304
G. A. Reid
Hewlett–Packard Company, 3500 Deer Creek Road, Palo Alto, California 94304
R. Hull
Hewlett–Packard Company, 3500 Deer Creek Road, Palo Alto, California 94304
Appl. Phys. Lett. 52, 546–548 (1988)
Article history
Received:
October 19 1987
Accepted:
December 07 1987
Citation
C. I. Drowley, G. A. Reid, R. Hull; Model for facet and sidewall defect formation during selective epitaxial growth of (001) silicon. Appl. Phys. Lett. 15 February 1988; 52 (7): 546–548. https://doi.org/10.1063/1.99412
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Mritunjay Kumar, Vishal Khandelwal, et al.