Suppression of dislocation threading from the substrate into GaAs epitaxial layers is investigated by using AlAs‐GaAs superlattice buffer layers grown by molecular beam epitaxial technique. The efficiency of suppression is compared among several types of AlAs‐GaAs superlattices with different electrically active impurity‐doping distributions. With the use of modulation‐doped AlAs(Si)‐GaAs superlattice, dislocation threading is almost perfectly suppressed, and consequently, a dislocation‐free epilayer can be grown. Dislocation bending at the AlAs/GaAs interface is thought to be due to the interaction between dislocations and electric charges.
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© 1988 American Institute of Physics.
1988
American Institute of Physics
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