The cubic transition metal‐gallium and transition metal‐aluminum intermetallic compounds with the CsCl structure (e.g., NiGa and CoAl) have been identified as candidate materials for stable and epitaxical contacts to III‐V semiconductors. Fabrication of these stable and epitaxical contacts using only conventional vacuum deposition (e.g., electron gun evaporation) has been demonstrated for the NiAl/GaAs system. It is expected that this unique class of contact materials will find application in III‐V‐based field‐effect transistors as well as novel electronic and photonic devices based on multiple semiconductor/metal heterojunctions.
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© 1988 American Institute of Physics.
1988
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