Pulsed ArF (193 nm) excimer laser photolysis of disilane, germane, and disilane‐ammonia mixtures has been used to deposit amorphous superlattices containing silicon, germanium, and silicon nitride layers. Transmission electron microscope cross‐section views demonstrate that structures having thin (5–25 nm) layers and sharp interlayer boundaries can be deposited at substrate temperatures below the pyrolytic threshold, entirely under laser photolytic control.
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