A study of the effect of zinc diffusion into beryllium‐ and silicon‐doped GaAs/Ga0.7Al0.3As structures has been carried out. The beryllium dopant was found to diffuse very rapidly as a result of the presence of diffusing zinc, while the silicon remained unaffected. A mechanism is proposed whereby competition for the gallium sites causes the beryllium to move interstitially wherever zinc is present.

Topics
Epitaxy, Transition metals, Chemical elements, Doping, Semiconductors
1.
J. N.
Miller
,
D. M.
Collins
, and
N. J.
Moll
,
Appl. Phys. Lett.
46
,
960
(
1985
).
Google Scholar
Crossref
Search ADS
 
2.
P.
Enquist
,
G. W.
Wicks
,
L. F.
Eastman
, and
C.
Hitzman
,
J. Appl. Phys.
58
,
4130
(
1985
).
Google Scholar
Crossref
Search ADS
 
3.
A. J.
SpringTharpe
 and
M. N.
Svilans
,
Inst. Phys. Conf. Ser.
65
,
589
(
1982
).
Google Scholar
 
4.
H. C. Casey, in Atomic Diffusion in Semiconductors, edited by D. Shaw (Plenum, London, 1973), p. 351.
5.
M.
Geva
 and
T. E.
Seidel
,
J. Appl. Phys.
59
,
2408
(
1983
).
Google Scholar
Crossref
Search ADS
 
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© 1988 American Institute of Physics.
1988
American Institute of Physics
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