Epitaxial GaAs/NiAl/GaAs heterostructures consisting of buried NiAl layers and GaAs overlayers that are monocrystalline and well aligned have been fabricated by a combination of solid‐phase reactions and molecular beam epitaxy. The structures have been characterized by reflection high‐energy electron diffraction, electron microscopy, and ion channeling. The achievement of these stable and epitaxial buried‐metal heterostructures makes possible the fabrication of metal‐base and permeable‐base transistors, buried interconnects, and buried ground planes.
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1988
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