We model the subpicosecond evolution of a nonthermal electron distribution injected into a GaAs/AlGaAs quantum well using an ensemble Monte Carlo simulation which includes electron‐electron scattering. The calculated results are in good agreement with the experimental time dependence of the carrier distribution function from recent bleaching experiments with carrier‐carrier scattering the dominant mechanism contributing to band filling.
Skip Nav Destination
Research Article| August 24 1987
Subpicosecond dynamics of electron injection into GaAs/AlGaAs quantum wells
S. M. Goodnick;
S. M. Goodnick, P. Lugli; Subpicosecond dynamics of electron injection into GaAs/AlGaAs quantum wells. Appl. Phys. Lett. 24 August 1987; 51 (8): 584–586. https://doi.org/10.1063/1.98355
Download citation file: