We model the subpicosecond evolution of a nonthermal electron distribution injected into a GaAs/AlGaAs quantum well using an ensemble Monte Carlo simulation which includes electron‐electron scattering. The calculated results are in good agreement with the experimental time dependence of the carrier distribution function from recent bleaching experiments with carrier‐carrier scattering the dominant mechanism contributing to band filling.
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© 1987 American Institute of Physics.
1987
American Institute of Physics
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