Transmission electron microscopy and carrier concentration measurements are used to characterize the layer interdiffusion (Al‐Ga interdiffusion) mechanism of a Se‐doped AlxGa1xAs‐GaAs superlattice (SL) under high‐temperature annealing. By varying the annealing environment and comparing the results with similarly annealed undoped SL’s and Mg‐doped SL’s, we find that the layer interdiffusion occurs through interaction of the Se impurity with native defects associated with As‐rich conditions, the most likely of which is the column III vacancy.

1.
W. D.
Laidig
,
N.
Holonyak
, Jr.
,
M. D.
Camras
,
K.
Hess
,
J. J.
Coleman
,
P. D.
Dapkus
, and
J.
Bardeen
,
Appl. Phys. Lett.
38
,
776
(
1981
).
2.
K.
Meehan
,
N.
Holonyak
, Jr.
,
J. M.
Brown
,
M. A.
Nixon
,
P.
Gavrilovic
, and
R. D.
Bumham
,
Appl. Phys. Lett.
45
,
549
(
1984
).
3.
N.
Holonyak
, Jr.
,
W. D.
Laidig
,
M. D.
Camras
,
J. J.
Coleman
, and
P. D.
Dapkus
,
Appl. Phys. Lett.
39
,
102
(
1981
);
see also N. Holonyak, Jr. and W. D. Laidig, U.S. Patent No. 4 378 255 (6 May 1981).
4.
R. W.
Kaliski
,
P.
Gavrilovic
,
K.
Meehan
,
J.
Gavrilovic
,
K. C.
Hsieh
,
G. S.
Jackson
,
N.
Holonyak
, Jr.
,
J. J.
Coleman
,
R. D.
Burnham
,
R. L.
Thornton
, and
T. L.
Paoli
,
J. Appl. Phys.
58
,
101
(
1985
).
5.
E. V. K.
Rao
,
H.
Thibierge
,
F.
Brillouet
,
F.
Alexandre
, and
R. A.
Azoulay
,
Appl. Phys. Lett.
46
,
867
(
1985
).
6.
M.
Kawabe
,
N.
Shimizu
,
F.
Hasegawa
, and
Y.
Nannichi
,
Appl. Phys. Lett.
46
,
849
(
1985
).
7.
E. V. K.
Rao
,
P.
Ossart
,
F.
Alexandre
, and
H.
Thibierge
,
Appl. Phys. Lett.
50
,
588
(
1987
).
8.
R. D. Dupuis, L. A. Moudy, and P. D. Dapkus, in Proceedings of the 7th International Symposium on GaAs and Related Compounds, edited by C. M. Wolfe (Institute of Physics, London, 1979), pp. 1–9;
see also
M. J.
Ludowise
,
J. Appl. Phys.
58
,
R31
(
1985
).
9.
N.
Holonyak
, Jr.
,
B. A.
Vojak
,
R. M.
Koibas
,
R. D.
Dupuis
, and
P. D.
Dapkus
,
Solid‐State Electron.
33
,
431
(
1979
).
10.
R. W.
Kaliski
,
D. W.
Nam
,
D. G.
Deppe
,
N.
Holonyak
, Jr.
,
K. C.
Hsieh
, and
R. D.
Burnham
,
J. Appl. Phys.
62
,
998
(
1987
).
11.
G. A.
Baraff
and
M.
Schüter
,
Phys. Rev. Lett.
55
,
1327
(
1985
).
12.
S. Y.
Chiang
and
G. L.
Pearson
,
J. Appl. Phys.
46
,
2986
(
1975
).
13.
B.
Molnar
,
J. Electrochem. Soc.
123
,
767
(
1976
).
14.
H.
Reiss
,
J. Chem. Phys.
21
,
1209
(
1953
).
15.
W.
Shockley
and
J. L.
Moll
,
Phys. Rev.
119
,
1480
(
1960
).
16.
J. R. Manning, Diffusion Kinetics for Atoms in Crystals (Van Nostrand, Princeton, N.J., 1968), pp. 95 and 166.
17.
H. C. Casey, Jr., in Atomic Diffusion in Semiconductors, edited by D. Shaw (Plenum, New York, 1973), pp. 367–369.
18.
K. Ishida, K. Matsui, T. Fukunaga, T. Takamori, J. Kobayashi, K. Ishida, and H. Nakashima, in Proceedings of the 13th International Symposium on GaAs and Related Compounds, edited by W. T. Lindley (Institute of Physics, Bristol, 1986), pp. 361–366.
19.
L. J.
Vielartd
,
J. Phys. Chem. Solids
21
,
318
(
1961
).
20.
G. R.
Antell
,
Solid‐State Electron.
8
,
943
(
1965
).
21.
M. E.
Greiner
and
J. F.
Gibbons
,
Appl. Phys. Lett.
44
,
750
(
1984
).
22.
L. J.
Guido
,
K. C.
Hsieh
,
N.
Holonyak
, Jr.
,
R. W.
Kaliski
,
V.
Eu
,
M.
Feng
, and
R. D.
Burnham
,
J. Appl. Phys.
51
,
1329
(
1987
).
23.
D. G.
Deppe
,
N.
Holonyak
, Jr.
,
F. A.
Kish
, and
J. E.
Baker
,
Appl. Phys. Lett.
50
,
998
(
1987
).
This content is only available via PDF.
You do not currently have access to this content.