A two‐step metalorganic vapor phase epitaxial growth technique for fully planar GaAs/GaAlAs single quantum well buried heterostructure lasers with oxygen‐doped semi‐insulating blocking layers is described. GaAlAs blocking layer with resistivity above 106 Ω cm is reproducibly obtained by introducing oxygen at a concentration above 0.03 ppm during the growth. The selective growth mode of GaAlAs layers in etched grooves is studied to realize fully planar buried structures. Lasing characteristics with threshold current of 19 mA, external differential quantum efficiency of 50%, and maximum light output power of 100 mW/facet are confirmed.
REFERENCES
1.
2.
3.
F.
Brillouet
, J.
Riou
, M.
Trotte
, R.
Azoulay
, and L.
Dugrand
, Electron. Lett.
20
, 857
(1984
).4.
5.
C. S.
Hong
, D.
Kasemset
, M. E.
Kim
, and R. A.
Milano
, Electron. Lett.
19
, 759
(1983
).6.
T.
Iwasaki
, N.
Matsuo
, and N.
Matsumoto
, Jpn. J. Appl. Phys.
25
, L66
(1986
).7.
8.
9.
D.
Boccon‐Gibod
, J. P.
Andre
, P.
Baudet
, and J. P.
Hallais
, IEEE Trans. Electron Devices
ED‐27
, 1141
(1980
).10.
K.
Kamon
, M.
Shimazu
, K.
Kimura
, M.
Mihara
, and M.
Ishii
, J. Cryst. Growth
77
, 297
(1986
).
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© 1987 American Institute of Physics.
1987
American Institute of Physics
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