Infrared absorption of epitaxial type A and type B NiSi2 layers on Si(111) has been measured with photoacoustic spectroscopy. Type A silicides showed identical absorption as type B layers with corresponding thicknesses. The observed dependence of absorption on silicide thickness agrees with calculations based on no‐interface absorption, in sharp contrast to previous studies of nonepitaxial silicide interfaces. These results suggest that the densities of electronic states at epitaxial NiSi2 interfaces are below the detection limit of this technique, ∼1014 cm2.

1.
E. H. Rhoderick, Metal‐Semiconductor Contacts (Clarendon, Oxford, 1978).
2.
L. J.
Brilison
,
Surf. Sci. Rep.
2
,
123
(
1982
).
3.
J.
Tersoff
,
Phys. Rev. Lett.
52
,
465
(
1984
).
4.
V.
Heine
,
Phys. Rev. A
138
,
1689
(
1965
).
5.
E. H.
Nicollian
and
A.
Goetzberger
,
Bell Sys. Tech. J.
46
,
1055
(
1967
).
6.
J.
Werner
,
K.
Ploog
, and
H. J.
Queisser
,
Phys. Rev. Lett.
57
,
1080
(
1986
).
7.
P. S.
Ho
,
E. S.
Yang
,
H. L.
Evans
, and
X.
Wu
,
Phys. Rev. Lett.
56
,
177
(
1986
).
8.
C.
Barret
,
F.
Chekir
, and
A.
Vapailie
,
J. Phys. C
16
,
2421
(
1983
).
9.
J. Werner, R. T. Tung, A. F. J. Levi, and M. Anzlowar, Mater. Res. Soc. Symp. Proc. (1987) (in press).
10.
T.
Flohr
and
M.
Schulz
,
Appl. Phys. Lett.
48
,
1534
(
1986
).
11.
D.
Cherns
,
G. R.
Anstis
,
J. L.
Hutchison
, and
J. C. H.
Spence
,
Philos. Mag. A
46
,
849
(
1982
).
12.
J. M.
Gibson
,
J. C.
Bean
,
J. M.
Poate
, and
R. T.
Tung
,
Appl. Phys. Lett.
41
,
818
(
1982
).
13.
R. T.
Tung
,
Phys. Rev. Lett.
52
,
461
(
1984
).
14.
M.
Liehr
,
P. E.
Schmidt
,
F. K.
LeGoues
, and
P. S.
Ho
,
Phys. Rev. Lett.
54
,
2139
(
1985
).
15.
R. T.
Tung
,
J. M.
Gibson
, and
J. M.
Poate
,
Phys. Rev. Lett.
50
,
429
(
1983
).
16.
R. J.
Hauenstein
,
T. E.
Schlesinger
,
T. C.
McGill
,
B. D.
Hunt
, and
L. J.
Schowalter
,
Appl. Phys. Lett.
47
,
853
(
1985
).
17.
R. T.
Tung
,
K. K.
Ng
,
J. M.
Gibson
, and
A. F. J.
Levi
,
Phys. Rev. B
33
,
7077
(
1986
).
18.
H. von Känel, J. Henz, M. Ospelt, and P. Wachter, Phys. Scri. (Proc. 7th Euro. Phys. Soc., Pisa 1987).
19.
A.
Chantre
,
A. F. J.
Levi
,
R. T.
Tung
,
W. C.
Dautremont‐Smith
, and
M.
Anzlowar
,
Phys. Rev. B
34
,
4415
(
1986
).
20.
A.
Ishizaka
and
Y.
Shiraki
,
J. Electrochem. Soc.
133
,
666
(
1986
).
21.
R. T.
Tung
,
J. M.
Gibson
, and
J. M.
Poate
,
Appl. Phys. Lett.
42
,
888
(
1983
).
22.
A. Rosencwaig, Photoacoustics and Photoacoustic Spectroscopy (Wiley, New York, 1971).
23.
R. D.
Frampton
,
E. A.
Irene
, and
F. M.
d’Heurle
,
J. Appl. Phys.
59
,
978
(
1986
).
24.
H.‐W.
Chen
and
J.‐T.
Lue
,
J. Appl. Phys.
59
,
2165
(
1986
).
25.
A.
Zur
,
T. C.
McGill
, and
D. L.
Smith
,
Phys. Rev. B
28
,
2060
(
1983
).
26.
C.
Mailhiot
and
C. B.
Duke
,
Phys. Rev. B
33
,
1118
(
1986
).
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