Hot‐electron transistors fabricated using a 600‐Å InGaAs base and a 500‐Å InAlAs barrier have shown a peak ballistic common base current gain of 0.82 at 77 K despite the large injection energies. Reduction of injection energies by lowering the emitter and collector barriers should lead to an even higher ballistic transport ratio due to the reduced Γ‐L scattering.
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