Ga0.47In.53As/InP quantum well structures grown by atmospheric pressure organometallic vapor phase epitaxy are characterized by high‐resolution transmission electron microscopy (HRTEM) and 4 K photoluminescence (PL). Microdensitometer analysis of the HRTEM images shows GaInAs wells as narrow as 10 Å with slightly asymmetric interface widths. The InP to GaInAs transitions occur within 200 monolayers while the GaInAs to InP transitions are 3–5 monolayers wide, probably due to As carryover. 4 K PL shows half‐widths below 9 meV for quantization shifts up to 140 meV. PL peak shifts as large as 395 meV for the narrowest quantum wells are observed compared to bulk Ga0.47In0.53As.

1.
J. H.
Marsh
,
J. S.
Roberts
, and
P. A.
Claxton
,
Appl. Phys. Lett.
46
,
1161
(
1985
).
2.
M. B.
Panish
,
H.
Temkin
,
R. A.
Hamra
, and
S. N. G.
Chu
,
Appl. Phys. Lett.
49
,
164
(
1986
).
3.
M.
Razeghi
and
J. P.
Duchemin
,
J. Cryst. Growth
70
,
145
(
1984
).
4.
M. S.
Skolnick
,
P. R.
Tapster
,
S. I.
Bass
,
N.
Apsley
,
A. D.
Pitt
,
N. G.
Chew
,
A. G.
Cullis
,
S. P.
Aldred
, and
C. A.
Warwick
,
Appl. Phys. Lett.
48
,
1455
(
1986
).
5.
K. W. Carey, R. Hull, J. E. Fouquet, F. G. Kellert, G. Reid, D. Bimberg, D. Oertel, and R. Bauer, paper B‐6 presented at the Electronic Materials Conference, Amherst, June 1986.
6.
B. I.
Miller
,
E. F.
Schubert
,
U.
Doren
,
A.
Ourmazd
,
A. H.
Dayem
, and
R. J.
Capik
,
Appl. Phys. Lett.
49
,
1384
(
1986
).
7.
F.
Scholz
,
P.
Wiedemann
,
U.
Nerz
,
K. W.
Benz
,
G.
Trankle
,
E.
Lach
, and
A.
Forchel
,
J. Cryst. Growth
77
,
564
(
1986
).
8.
W. T.
Tsang
and
E. F.
Schubert
,
Appl. Phys. Lett.
49
,
220
(
1986
).
9.
R. Hull, K. W. Carey, G. A. Reid, J. Fouquet, and G. Trott, in Proceedings of the Materials Research Society, edited by J. D. Dow and I. K. Schuller (Materials Research Society, Pittsburgh, PA, 1987), Vol. 77.
10.
G.
Bastard
,
Phys. Rev.
24
,
4714
(
1981
).
11.
R. Hull, K. W. Carey, J. E. Fouquet, G. A. Reid, S. J. Rosner, D. Bimberg, and D. Oertel, to be published in the Proceedings of the 13th International Symposium on GaAs and Related Compounds, Las Vegas, NV, October, 1986 (Adam Hilger, Bristol, 1987).
This content is only available via PDF.
You do not currently have access to this content.