Tuning of the optical absorption coefficient by electrical bias in doping superlattices (nipi crystals) is demonstrated for the first time by both photoconductivity and transmission measurements at room temperature. The absorption coefficient at 1.04 μm obtained from the photoconductivity measurement varies by a factor of 240 when the pn junction bias is changed from 0.4 to −1.5 V. A change of transmission up to 22% at 0.89 μm wavelength through a 2.1‐μm‐thick nipi crystal is achieved by varying bias merely between 0.6 and −2.0 V. Moreover, the change of transmission is nearly linear with pn junction bias.

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