We report on replacing the GaAs base in the AlGaAs/GaAs heterojunction bipolar transistor with pseudomorphic GaInAs. Base regions consisting of uniform Ga0.95In0.05As and graded Ga1−yInyAs (y=0.0–0.05) are compared to base regions consisting of GaAs. The highest dc common emitter current gain is obtained with the graded Ga1−yInyAs base.

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© 1986 American Institute of Physics.
1986
American Institute of Physics
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