In this letter we propose and analyze a new semiconductor structure that can be fabricated by present day technology and can lead to large quantum interference effects with potential device applications.

1.
R. A.
Webb
,
S.
Washburn
,
C. P.
Umbach
, and
R. B.
Laibowitz
,
Phys. Rev. Lett.
54
,
2696
(
1985
).
2.
S.
Datta
,
M. R.
Melloch
,
S.
Bandyopadhyay
,
R.
Noren
,
M.
Vaziri
,
M.
Miller
, and
R.
Reifenberger
,
Phys. Rev. Lett.
55
,
2344
(
1985
).
3.
Y. J.
Chang
and
H.
Kroemer
,
Appl. Phys. Lett.
45
,
449
(
1984
).
4.
R.
Tsu
and
L.
Esaki
,
Appl. Phys. Lett.
22
,
562
(
1973
).
5.
Y.
Gefen
,
Y.
Imry
, and
M. Y.
Azbel
,
Phys. Rev. Lett.
52
,
129
(
1984
).
6.
M.
Büttiker
,
Y.
Imry
, and
M. Y.
Azbel
,
Phys. Rev. A
30
,
1982
(
1984
).
7.
M.
Büttiker
,
Phys. Rev. B
32
,
1984
(
1985
).
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