Using video recording equipment we are able to visualize and study both the melting and freezing interfaces in lamp zone melting recrystallization of silicon on insulator (SOI) films. A so‐called ‘‘explosive’’ melting has been observed, corresponding to a noncontinuous advance of the front. We also show the effectiveness of an etched pattern in the underlying SiO2 on the modulation of the solidification front. We thereby confirm the entrainment effect of this pattern. We observe then the effect of the scan speed on the liquid/solid interface morphology together with the entrainment efficiency.
REFERENCES
1.
See, for example,
J. C. C.
Fan
, B.‐Y.
Tsaur
, and M. W.
Geis
, J. Cryst. Growth
63
, 453
(1983
).2.
See, for example,
A.
Kamgar
and E.
Labate
, Mater. Lett.
1
, 91
(1982
).3.
H. J.
Leamy
, C. C.
Chang
, H.
Baumgart
, R. A.
Lemons
, and J.
Cheng
, Mater. Lett.
1
, 33
(1982
).4.
5.
M. Haond, D. Dutartre, and D. Bensahel, Proceedings of the Material Research Society, Strasbourg, May 85, to be published in J. Phys. (Paris) Suppl.
6.
D.‐P.
Vu
, M.
Haond
, D.
Bensahel
, and M.
Dupuy
, J. Appl. Phys.
54
, 437
(1983
).7.
D. P. Woodruff, The Solid‐Liquid Interface (Cambridge University, New York, 1973), p. 32.
8.
9.
McD. Robinson, G. K. Celler, and D. J. Lischner, in Comparison of Thin Film Transistor and SOI Technologies, edited by H. W. Lam and M. J. Thompson (North‐Holland, New York, 1984), p. 71.
10.
11.
W. G.
Hawkins
and D. K.
Biegelsen
, Appl. Phys. Lett.
42
, 358
(1983
).12.
D. Dutartre, H. Haond, and D. Bensahel, Proceedings of the Material Research Society, Strasbourg, May 85, to be published in J. Phys. (Paris) Suppl.
13.
M. W.
Geis
, H. I.
Smith
, B.‐Y.
Tsaur
, J. C. C.
Fan
, E. W.
Maby
, and D. A.
Antoniadis
, Appl. Phys. Lett.
40
, 158
(1982
).
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© 1986 American Institute of Physics.
1986
American Institute of Physics
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