A heavily conducting region has been observed on implanting nitrogen into silicon for forming a buried dielectric layer. The conduction predominantly occurs in the surface silicon layer adjacent to the higher nitrogen content isolating region. The doping, ≳1018 cm−3 and exceeding previously observed nitrogen related doping, is relatively stable at customary 1150–1200 °C processing temperatures and its elimination requires annealing ≳1300 °C.
REFERENCES
1.
R. J.
Dexter
, S. B.
Watelski
, and S. T.
Picraux
, Appl. Phys. Lett.
23
, 455
(1973
).2.
3.
4.
D. E. Davies (unpublished).
5.
J. Stephens, B. J. Smith, G. W. Hinder, D. C. Marshall, and E. M. Wittam, in Proceedings of 2nd International Conference on Ion Implantation, edited by I. Ruge and J. Graul (Springer, Berlin, 1971), p. 489.
6.
J. B.
Mitchell
, J.
Shewchun
, D. A.
Thompson
, and J. A.
Davies
, J. Appl. Phys.
46
, 335
(1975
).7.
E. F.
Kennedy
, L.
Csepregi
, J. W.
Mayer
, and T. W.
Sigmon
, J. Appl. Phys.
48
, 4241
(1977
).8.
9.
10.
C. D. Fung, J. L. Leao, K. R. Elsayed, and J. J. Kopanski, in Proceedings of Symposium on Thin Films, edited by V. Ram, J. Kapoor, and H. J. Stein (Electrochemical Society, New Jersey, 1983), Vol. 83‐8, p. 403.
This content is only available via PDF.
© 1986 American Institute of Physics.
1986
American Institute of Physics
You do not currently have access to this content.
