The growth of GaInP/AlGaAs heterostructures by organometallic vapor phase epitaxy is reported. It was observed that different GaInP alloy compositions are required to lattice match films to AlGaAs and GaAs buffer layers for optimum results. Quantum well heterostructures with GaInP regions as narrow as 30 Å have been produced with abrupt transitions of the group III and group V species across each interface. The results suggest that this material system is suitable for the fabrication of high efficiency visible light sources.
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© 1986 American Institute of Physics.
1986
American Institute of Physics
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