A low‐temperature growth technique for GaN single crystal films has been developed utilizing electron cyclotron resonance (ECR) plasma excitation. The GaN film has been grown in a low pressure metalorganic vapor phase epitaxy (MOVPE) system using the reaction of trimethylgallium with highly activated nitrogen extracted from the ECR plasma chamber. Growth conditions of GaN single crystal films have been clarified by examining reflection high‐energy electron diffraction patterns. The surface morphology of the GaN single crystal film is very smooth and electrical properties are comparable to those of a MOVPE technique at high growth temperatures.
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© 1986 American Institute of Physics.
1986
American Institute of Physics
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