Data are presented showing that an AlxGa1−x As‐GaAs quantum well heterostructure (QWH) or superlattice (SL) can be selectively disordered into higher gap bulk crystal by impurity (Si) diffusion and then have grown epitaxially on it (‘‘stacked’’ on it) another SL (or QWH), which can be subjected to further impurity‐induced layer disordering in a patterned form. The resulting three‐dimensional array can be operated as a photopumped laser.

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