Rapid thermal processing has been used to study the annealing of interface states in aluminum gate metal‐oxide‐silicon capacitors. Midgap Dit values of 1012 cm−2 eV−1, as measured by the combined high‐frequency/quasistatic capacitance‐voltage method, drop to less than 2×1010 cm−2 eV−1 after 2 min at 300 °C and after only 5 s at 380 °C. This compares with a standard anneal time of 30 min at 450 °C commonly used in conventional furnace annealing. The temporal dependence of Dit suggests that interface state annealing is not limited by transport of neutral hydrogen through the oxide. Room‐temperature annealing is insignificant over a trial interval of several months.
REFERENCES
1.
2.
G. Schols and H. E. Maes, Symposium on Silicon Nitride Thin Insulating Films, Electrochemical Society ECS 83‐8, 1983, p. 94.
3.
4.
R. W.
Lee
, R. C.
Frank
, and D. E.
Swets
, J. Chem. Phys.
36
, 1062
(1961
).5.
Y. T.
Yeow
, D. R.
Lamb
, and S. D.
Brotherton
, J. Phys. D
8
, 1495
(1975
).6.
A. G. Associates, 1052 Elwell Ct., Palo Alto, CA 94303.
7.
8.
E. H.
Poindexter
, P. J.
Caplan
, B. E.
Deal
, and R. R.
Razouk
, J. Appl. Phys.
52
, 879
(1981
).9.
P. Balk, paper 111 presented at Electrochemical Society Fall Meeting, Buffalo, 1965.
10.
Although the diffusant profile is Gaussian for a fixed initial dose, the varies as an error function because it is related to the integral of the hydrogen concentration profile.
11.
B. E. Deal (private communication).
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© 1985 American Institute of Physics.
1985
American Institute of Physics
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