Specular epitaxial films of CdTe have been grown on (0001) sapphire substrates by the metalorganic chemical vapor deposition technique. The films grow with the (111)A orientation and exhibit narrow x‐ray linewidths. Secondary ion mass spectrometry profiles indicate negligible diffusion of aluminum from the substrates. Epitaxial films of HgCdTe have been grown on top of the CdTe layers. Initial Hall measurements are encouraging for an all metalorganic chemical vapor deposition process for depositing HgCdTe on sapphire substrates.
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© 1985 American Institute of Physics.
1985
American Institute of Physics
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