Atomic layer epitaxy (ALE) of III‐V semiconductors is reported for the first time using metalorganic and hydride sources. This is achieved by using a new growth chamber and susceptor design which incorporates a shuttering mechanism to allow successive exposure to streams of gases from the two sources. Also, most of the gaseous boundary layer is sheared off after exposure to the gas streams. GaAs and AlAs deposited by ALE are single crystal and show good optical properties.

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