InP/SiO2 interfaces have been studied by high resolution electron microscopy in cross section, by ellipsometry, and by x‐ray photoelectron spectroscopy. The roughness of the interface is shown to vary from 10 to 100 Å peak to peak depending on the InP surface treatment prior to SiO2 desposition, and some evidence is found for a small amount of native oxide and P segregation at the interface. Thermal oxide grown on InP at 350 °C is shown to consist of two separate layers, an inner one of 30–70 Å thickness and probably composition InPO4, and an outer one of 60‐Å thickness and probably composition In2O3.
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© 1985 American Institute of Physics.
1985
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