Buried implanted oxide layers have been formed by high dose implantation of oxygen ions (3×1018 ions cm−2) into 〈100〉 silicon wafers, at a constant temperature of 500 °C. The implanted layers were studied by cross‐sectional transmission electron microscopy and secondary ion mass spectroscopy. The defects at both the top Si/SiO2 and the SiO2/bulk Si interfaces are shown to be SiO2 precipitates. The precipitates are unstable and can be eliminated by heat treatment, and a homogeneous top silicon layer with a low density of dislocations can be obtained.
REFERENCES
1.
2.
M. R. Taylor, C. G. Tuppen, R. P. Arrowstnith, R. M. Dobson, A. E. Glaccum, M. C. Wilson, G. R. Booker, and P. L. F. Hemment, Microscopy of Semiconducting Materials, Inst. Phys. Conf. Ser. No. 67, 485 (1983).
3.
C. G.
Tuppen
, M. R.
Taylor
, P. L. F.
Hemment
, and R. P.
Arrowsmith
, Appl. Phys. Lett.
45
, 57
(1984
).4.
P. L. F.
Hemment
, E.
Maydell‐Ondrusz
, K. G.
Stevens
, J. A.
Kilner
, and J.
Butcher
, Vacuum
34
, 203
(1984
).5.
6.
K.
Das
, J. B.
Butcher
, and K. V.
Anand
, J. Electron. Mater.
13
, 635
(1984
).7.
8.
D. Fathy, O. L. Krivanek, R. W. Carpenter, and S. R. Wilson, Inst. Phys. Conf. Ser. No. 67, Sect. 10, p. 479, Microscopy of Semiconducting Materials Conference, Oxford 1983.
9.
O. W.
Holland
, T. P.
Sjoreen
, D.
Fathy
, and J.
Narayan
, Appl. Phys. Lett.
45
, 10
(1984
).10.
J.
Washburn
, Defects in Semiconductors, Proc. Mater. Res. Soc.
2
, 209
(1981
).11.
12.
J.
Van Landuyt
, R.
Gevers
, and S.
Amelinckx
, Phys. Status Solidi
10
, 319
(1965
).13.
14.
15.
F. A.
Ponce
, T.
Yamashita
, and S.
Hahn
, Appl. Phys. Lett.
43
, 1051
(1983
).16.
M.
Olivier
, D.
Lafeuille
, M.
Dupuy
, G.
Rolland
, and B.
Guinet
, The Electrochemical Society Spring Meeting, Toronto
, 75‐1
, 343
(1975
).17.
D. M.
Maher
, A.
Staudinger
, and J. R.
Patel
, J. Appl. Phys.
47
, 3813
(1976
).18.
19.
R. F.
Pinizotto
, S.
Matteson
, M. W.
Lam
, and S. D. S.
Malhi
, IEEE Trans. Nucl. Sci.
30
, 1722
(1983
).20.
Y.
Homma
, M.
Oshima
, and T.
Hayashi
, Jpn. J. Appl. Phys.
21
, 890
(1982
).21.
P. Juliet, Thesis, Grenoble University, France 1984, published as C.E.A. Report No. 84575, C. E.N. SACLAY 91191 GIF‐Sur‐Yvette, France.
This content is only available via PDF.
© 1985 American Institute of Physics.
1985
American Institute of Physics
You do not currently have access to this content.
