Both hexagonal and tetragonal forms of MoSi2 (h‐MoSi2 and t‐MoSi2) were grown epitaxially on (111)Si for the first time. The best epitaxy was obtained in samples annealed at 1050 °C for 1 h. The orientation relationships between epitaxial h‐MoSi2 and Si were determined to be [0001]MoSi2//[111]Si and (202̄0)MoSi2//(202̄)Si whereas those between epitaxial t‐MoSi2 and Si were analyzed to be [110]MoSi2//[111]Si and (004)MoSi2//(2̄02)Si. Regular interfacial dislocations, 100 Å in spacing, were identified to be of edge type with (1)/(6) 〈112〉 Burgers vectors. Preliminary investigations indicated that a number of other technologically important refractory silicides can all be grown epitaxially on silicon. The results present an exciting prospect to fabricate novel classes of devices with desirable characteristics.
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1 June 1985
Research Article|
June 01 1985
Localized epitaxial growth of hexagonal and tetragonal MoSi2 on (111) Si
W. T. Lin;
W. T. Lin
Department of Materials Science and Engineering and Materials Science Center, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
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L. J. Chen
L. J. Chen
Department of Materials Science and Engineering and Materials Science Center, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
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Appl. Phys. Lett. 46, 1061–1063 (1985)
Article history
Received:
January 04 1985
Accepted:
March 21 1985
Citation
W. T. Lin, L. J. Chen; Localized epitaxial growth of hexagonal and tetragonal MoSi2 on (111) Si. Appl. Phys. Lett. 1 June 1985; 46 (11): 1061–1063. https://doi.org/10.1063/1.95760
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