GaInAs/AlInAs single quantum wells have been grown lattice matched to InP substrates by molecular beam epitaxy. The quantum well thicknesses ranged from 15 to more than 100 Å. The low‐temperature photoluminescence exhibited a monotonically increasing spectral linewidth with decreasing well thickness. Of the several possible broadening mechanisms of the quantum well photoluminescence, two mechanisms were found to dominate: one mechanism for thin wells and one for thick wells. Quantum wells thicker than 50 Å were found to have their low‐temperature photoluminescence spectra broadened primarily by a transfer of electrons from the AlInAs cladding layers into the GaInAs quantum well. Wells thinner than 50 Å had their photoluminescence broadened mainly by interface roughness.
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15 May 1985
Research Article|
May 15 1985
Luminescence line shape broadening mechanisms in GaInAs/AlInAs quantum wells
D. F. Welch;
D. F. Welch
School of Electrical Engineering and National Research and Resource Facility for Submicron Structures, Phillips Hall, Cornell University, Ithaca, New York 14853
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G. W. Wicks;
G. W. Wicks
School of Electrical Engineering and National Research and Resource Facility for Submicron Structures, Phillips Hall, Cornell University, Ithaca, New York 14853
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L. F. Eastman
L. F. Eastman
School of Electrical Engineering and National Research and Resource Facility for Submicron Structures, Phillips Hall, Cornell University, Ithaca, New York 14853
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Appl. Phys. Lett. 46, 991–993 (1985)
Article history
Received:
December 12 1984
Accepted:
March 05 1985
Citation
D. F. Welch, G. W. Wicks, L. F. Eastman; Luminescence line shape broadening mechanisms in GaInAs/AlInAs quantum wells. Appl. Phys. Lett. 15 May 1985; 46 (10): 991–993. https://doi.org/10.1063/1.95791
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