Galvanomagnetic measurements were made on p‐type Hg1−xCdxTe liquid phase epitaxial layers as a function of magnetic field and temperature. The dependence of the Hall coefficient on magnetic field was analyzed assuming mixed conduction of electrons and holes. The fitting of the theory to the experimental data permits determination of the concentration of holes and electrons and their mobilities over a range of temperatures. This leads to values of the intrinsic carrier concentration, which are in good agreement with those generated from theoretical calculations.

1.
For a recent review, see R. Dornhaus, and G. Nimtz, Narrow‐Gap Semiconductors, Vol. 98, in Springer Tracts in Modern Physics (Springer, Berlin, 1983), pp. 202–221.
2.
W.
Scott
 and
R. J.
Hager
,
J. Appl. Phys.
42
,
803
(
1971
).
Google Scholar
Crossref
Search ADS
 
3.
C. T.
Elliott
,
I.
Melngailis
,
T. C.
Harman
, and
A. G.
Foyt
,
J. Phys. Chem. Solids
33
,
1527
(
1972
).
Google Scholar
Crossref
Search ADS
 
4.
W.
Scott
,
E. L.
Stelzer
, and
R. J.
Hager
,
J. Phys.
47
,
1408
(
1976
).
Google Scholar
 
5.
L. J.
Van der Pauw
,
Philips Res. Rep.
13
,
1
(
1958
).
Google Scholar
 
6.
R. C.
Chambers
,
Proc. Phys. Soc. A
65
,
903
(
1952
).
Google Scholar
Crossref
Search ADS
 
7.
R. A. Smith, Semiconductors (Cambridge University, Cambridge, 1961), p. 106.
8.
G. L.
Hansen
 and
J. L.
Schmit
,
J. Appl. Phys.
54
,
1639
(
1983
).
Google Scholar
Crossref
Search ADS
 
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© 1985 American Institute of Physics.
1985
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