Stress in TaSix/polycrystalline silicon structures has been examined as a function of film composition, annealing conditions, and deposition parameters. It was found that although stress in as‐deposited films is a strong function of these variables, annealed films exhibit a large tensile stress nearly independent of the parameters studied.

Topics
Semiconductor materials, Tensile stress
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© 1984 American Institute of Physics.
1984
American Institute of Physics
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