Study of defects in a rapidly degraded InGaAsP/InGaP double‐heterostructure laser grown by liquid phase epitaxy Available to Purchase

A rapidly degraded InGaAsP/InGaP double‐heterostructure laser (λ=810 nm) grown on a (001) oriented GaAs substrate during cw operation at room temperature, is investigated by photoluminescence topography and transmission electron microscopy. Several 〈100〉 dark‐line defects and 〈110〉 dark‐line defects parallel to the stripe are observed in the photoluminescence image of the active region. The 〈100〉 dark‐line defects are associated with classic interstitial type dislocation dipoles with Burgers vectors of the type a/2[101] 45° inclined to the junction plane. The 〈110〉 dark‐line defect corresponds to a half‐dislocation loop (b̄=a/2〈011〉) with many jogs (due to climb motion). In InGaAsP/InGaP material on GaAs, it is suggested that recombination enhanced defect motion (climb motion) can occur.