A rapidly degraded InGaAsP/InGaP double‐heterostructure laser (λ=810 nm) grown on a (001) oriented GaAs substrate during cw operation at room temperature, is investigated by photoluminescence topography and transmission electron microscopy. Several 〈100〉 dark‐line defects and 〈110〉 dark‐line defects parallel to the stripe are observed in the photoluminescence image of the active region. The 〈100〉 dark‐line defects are associated with classic interstitial type dislocation dipoles with Burgers vectors of the type a/2[101] 45° inclined to the junction plane. The 〈110〉 dark‐line defect corresponds to a half‐dislocation loop (b̄=a/2〈011〉) with many jogs (due to climb motion). In InGaAsP/InGaP material on GaAs, it is suggested that recombination enhanced defect motion (climb motion) can occur.
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1 May 1984
Research Article|
May 01 1984
Study of defects in a rapidly degraded InGaAsP/InGaP double‐heterostructure laser grown by liquid phase epitaxy Available to Purchase
Osamu Ueda;
Osamu Ueda
Fujitsu Laboratories, Ltd., 1677 Dannoki, Ono, Atsugi 243‐01, Japan
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Kiyohide Wakao;
Kiyohide Wakao
Fujitsu Laboratories, Ltd., 1677 Dannoki, Ono, Atsugi 243‐01, Japan
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Akio Yamaguchi;
Akio Yamaguchi
Fujitsu Laboratories, Ltd., 1677 Dannoki, Ono, Atsugi 243‐01, Japan
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Satoshi Komiya;
Satoshi Komiya
Fujitsu Laboratories, Ltd., 1677 Dannoki, Ono, Atsugi 243‐01, Japan
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Shoji Isozumi;
Shoji Isozumi
Fujitsu Laboratories, Ltd., 1677 Dannoki, Ono, Atsugi 243‐01, Japan
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Hiroshi Nishi;
Hiroshi Nishi
Fujitsu Laboratories, Ltd., 1677 Dannoki, Ono, Atsugi 243‐01, Japan
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Itsuo Umebu
Itsuo Umebu
Fujitsu Laboratories, Ltd., 1677 Dannoki, Ono, Atsugi 243‐01, Japan
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Osamu Ueda
Fujitsu Laboratories, Ltd., 1677 Dannoki, Ono, Atsugi 243‐01, Japan
Kiyohide Wakao
Fujitsu Laboratories, Ltd., 1677 Dannoki, Ono, Atsugi 243‐01, Japan
Akio Yamaguchi
Fujitsu Laboratories, Ltd., 1677 Dannoki, Ono, Atsugi 243‐01, Japan
Satoshi Komiya
Fujitsu Laboratories, Ltd., 1677 Dannoki, Ono, Atsugi 243‐01, Japan
Shoji Isozumi
Fujitsu Laboratories, Ltd., 1677 Dannoki, Ono, Atsugi 243‐01, Japan
Hiroshi Nishi
Fujitsu Laboratories, Ltd., 1677 Dannoki, Ono, Atsugi 243‐01, Japan
Itsuo Umebu
Fujitsu Laboratories, Ltd., 1677 Dannoki, Ono, Atsugi 243‐01, Japan
Appl. Phys. Lett. 44, 861–863 (1984)
Article history
Received:
January 03 1984
Accepted:
February 02 1984
Citation
Osamu Ueda, Kiyohide Wakao, Akio Yamaguchi, Satoshi Komiya, Shoji Isozumi, Hiroshi Nishi, Itsuo Umebu; Study of defects in a rapidly degraded InGaAsP/InGaP double‐heterostructure laser grown by liquid phase epitaxy. Appl. Phys. Lett. 1 May 1984; 44 (9): 861–863. https://doi.org/10.1063/1.94958
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