We have confirmed greatly improved resistance to photorefractive damage in compositions of lithium niobate containing 4.5 at. % MgO or more. Holographic diffraction measurements of photorefraction demonstrated that the improved performance is due to a hundredfold increase in the photoconductivity, rather than a decrease in the Glass current. The diffraction efficiency shows an Arrhenius dependence on temperature, with an activation energy of 0.1 eV for the damage‐resistant compositions, compared with 0.5 eV for undoped or low‐magnesium compositions. The damage‐resistant compositions are distinguished by a 2.83‐μm absorption line instead of the usual 2.87‐μm line due to the OH‐stretch vibration.
REFERENCES
1.
Gi‐Guo Zhong, Jin Jian, and Zhong‐Kang Wu, 11th International Quantum Electronics Conference, IEEE Cat. No. 80 CH 1561‐0, June 1980, p. 631.
2.
3.
4.
Chr.
Bräuchle
, Urs P.
Wild
, D. M.
Burland
, G. C.
Bjorklund
, and D. C.
Alvarez
, Opt. Lett.
7
, 177
(April 1982
).5.
This content is only available via PDF.
© 1984 American Institute of Physics.
1984
American Institute of Physics
You do not currently have access to this content.
