The complex dynamical resistivity of high‐quality transparent and heat‐reflecting indium tin oxide films, prepared by reactive e‐beam deposition, was evaluated from spectrophotometric measurements in the 0.25–50‐μm wavelength range. These data are explained in detail from a theory encompassing scattering of free electrons by ionized impurities.
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Our grain size is somewhat larger than in earlier work on evaporated 1TO films;
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We used a Beckman ACTA MVII instrument in the 0.25‐2.5‐μm range and a Perkin‐Elmer 580B instrument at 2.5‐50‐,μm. Both spectrophotometers were interfaced to a computer.
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The band edge displays an Urbach tail which may be related to the presence of ionized impurities; cf. N. F. Mott and E. A. Davis, Electronic Processes in Non‐Crystalline Materials, 2nd ed. (Clarendon, Oxford, 1979), p. 273.
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The mean free path corresponding to the dc resistivity is This is an order of magnitude smaller than the grain size of the ITO films; cf. Fig. 1.
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