The effect of the facet reflectivity on the linewidth of a single‐frequency (GaAl)As diode laser has been studied by measuring the linewidth as a function of the laser output power before and after a high reflectivity coating was applied to one facet of the laser. The observed linewidth reduction arising from the increase in the cavity Q agrees with predictions of linewidth theories. The results indicate that the application of high reflectivity coatings can be a practical method for achieving a substantial reduction of the linewidth of (GaAl)As diode lasers.

Topics
Lasers
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© 1984 American Institute of Physics.
1984
American Institute of Physics
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