InGaAsP/InGaP lasers emitting at 724–727 nm have been fabricated on GaAs substrates using liquid phase epitaxy. The threshold current is reduced to 8 kA/cm2 by thinning the active layer. Room‐temperature cw operation is achieved for the first time in the lasing wavelength range below 760 nm in this quaternary system.
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© 1984 American Institute of Physics.
1984
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